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YJQ4666B

YJQ4666B

Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -16V; -5.6A; 2.2W

Mfr Part #

YJQ4666B

Life Cycle

HSN Code

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Suppliers

TME

TME

Stock : 3220

Packaging Type

-

VendorPart#

YJQ4666B-YAN

Ware House

Poland Warehouse

Date Code

Min: 20
Mult: 10

Specifications

Case

DFN2020-6

Drain current

-5.6A

Drain-source voltage

-16V

Gate charge

7.2nC

Gate-source voltage

±10V

Kind of channel

enhanced

Kind of package

reel

Kind of package

tape

Manufacturer

YANGJIE TECHNOLOGY

Mounting

SMD

On-state resistance

60mΩ

Polarisation

Unipolar

Power dissipation

2.2W

Pulsed drain current

-28A

Technology

TRENCH POWER LV

Type of transistor

P-MOSFET