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YJQ15GP10A

YJQ15GP10A

Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A

Mfr Part #

YJQ15GP10A

Life Cycle

HSN Code

0000

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Suppliers

TME

TME

Stock : 4267

Packaging Type

-

VendorPart#

YJQ15GP10A-YAN

Ware House

Poland Warehouse

Date Code

Min: 3
Mult: 1

Specifications

Case

DFN3.3x3.3 EP

Drain current

-9.5A

Drain-source voltage

-100V

Gate charge

3.98nC

Gate-source voltage

±20V

Kind of channel

enhancement

Kind of package

reel

Kind of package

tape

Manufacturer

YANGJIE TECHNOLOGY

Mounting

SMD

On-state resistance

0.12Ω

Polarisation

Unipolar

Power dissipation

17.2W

Pulsed drain current

-45A

Technology

SPLIT GATE TRENCH

Type of transistor

P-MOSFET