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YJD80G06A

YJD80G06A

Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 56A; 42.5W

Mfr Part #

YJD80G06A

Life Cycle

HSN Code

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Suppliers

TME

TME

Stock : 2323

Packaging Type

-

VendorPart#

YJD80G06A-YAN

Ware House

Poland Warehouse

Date Code

Min: 3
Mult: 1

Specifications

Case

TO252

Drain current

56A

Drain-source voltage

60V

Gate charge

31nC

Gate-source voltage

±20V

Kind of channel

enhanced

Kind of package

reel

Kind of package

tape

Manufacturer

YANGJIE TECHNOLOGY

Mounting

SMD

On-state resistance

11mΩ

Polarisation

Unipolar

Power dissipation

42.5W

Pulsed drain current

240A

Technology

SPLIT GATE TRENCH

Type of transistor

N-MOSFET