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YJD100G10A

YJD100G10A

Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 300A; 121W; TO252

Mfr Part #

YJD100G10A

Life Cycle

HSN Code

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Suppliers

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

YJD100G10A-YAN

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

0

Specifications

Case

TO252

Drain current

100A

Drain-source voltage

100V

Gate charge

60.7nC

Gate-source voltage

±20V

Kind of channel

enhanced

Kind of package

reel

Kind of package

tape

Manufacturer

YANGJIE TECHNOLOGY

Mounting

SMD

On-state resistance

8mΩ

Polarisation

Unipolar

Power dissipation

121W

Pulsed drain current

300A

Type of transistor

N-MOSFET