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YJ4N65CZ

YJ4N65CZ

Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB

Mfr Part #

YJ4N65CZ

Life Cycle

HSN Code

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Suppliers

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

YJ4N65CZ-YAN

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 3
Mult: 1

0

Specifications

Case

TO220AB

Drain current

4A

Drain-source voltage

650V

Gate charge

20nC

Gate-source voltage

±20V

Heatsink thickness

max. 1.33mm

Kind of channel

enhanced

Kind of package

tube

Manufacturer

YANGJIE TECHNOLOGY

Mounting

THT

On-state resistance

2.6Ω

Polarisation

Unipolar

Power dissipation

100W

Pulsed drain current

16A

Type of transistor

N-MOSFET