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YJ10N65CZ

YJ10N65CZ

Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 40A; 178W; TO220AB

Mfr Part #

YJ10N65CZ

Life Cycle

NEW

HSN Code

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Suppliers

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

YJ10N65CZ-YAN

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

0

Specifications

Case

TO220AB

Drain current

10A

Drain-source voltage

650V

Gate charge

65nC

Gate-source voltage

±20V

Heatsink thickness

max. 1.33mm

Kind of channel

enhanced

Kind of package

tube

Manufacturer

YANGJIE TECHNOLOGY

Mounting

THT

On-state resistance

860mΩ

Polarisation

Unipolar

Power dissipation

178W

Pulsed drain current

40A

Type of transistor

N-MOSFET