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HAS530M12BM3

MOSFET 2N-CH 1200V 530A

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 3

Packaging Type

Bulk

VendorPart#

1697-HAS530M12BM3-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	530A
Drain to Source Voltage (Vdss)	1200V (1.2kV)
FET Feature	Silicon Carbide (SiC)
Gate Charge (Qg) (Max) @ Vgs	-
Grade	-
Input Capacitance (Ciss) (Max) @ Vds	-
Mounting Type	Chassis Mount
Operating Temperature	-
Package / Case	Module
Power - Max	-
Qualification	-
Rds On (Max) @ Id, Vgs	-
Supplier Device Package	-
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	-