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ECB2R8M12YM3

ECB2R8M12YM3

MOSFET Modules SiC, Module, 2.8m ohm, 1200V, 152mm, YM3, Six-Pack, Automotive

Mfr Part #

ECB2R8M12YM3

Life Cycle

New Product

HSN Code

85412900

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Suppliers

DigiKey Electronics

DigiKey Electronics

Stock : 2

Packaging Type

Box

VendorPart#

1697-ECB2R8M12YM3-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

Mouser Electronics

Mouser Electronics

Stock : 3

Packaging Type

-

VendorPart#

941-ECB2R8M12YM3

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

Specifications

Configuration

6 N-Channel (Three Phase Inverter)

Current - Continuous Drain (Id) @ 25°C

545A

Drain to Source Voltage (Vdss)

1200V (1.2kV)

FET Feature

-

Gate Charge (Qg) (Max) @ Vgs

1272nC @ 15V

Grade

-

Input Capacitance (Ciss) (Max) @ Vds

38500pF @ 800V

Mounting Type

Chassis Mount

Operating Temperature

-40°C ~ 175°C (TJ)

Package / Case

Module

Power - Max

1.485kW (Tj)

Qualification

-

Rds On (Max) @ Id, Vgs

3.7mOhm @ 450A, 15V

Supplier Device Package

-

Technology

Silicon Carbide (SiC)

Vgs(th) (Max) @ Id

3.6V @ 125mA