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C3M0120065J

C3M0120065J

MOSFET SiC, MOSFET, 120mOhm, 650V, TO-263-7, Industrial, Gen 3

Category

Mfr Part #

C3M0120065J

Life Cycle

HSN Code

85412900

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Suppliers

Mouser Electronics

Mouser Electronics

Stock : 2564

Packaging Type

-

VendorPart#

941-C3M0120065J

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

DigiKey Electronics

DigiKey Electronics

Stock : 1396

Packaging Type

Tube

VendorPart#

1697-C3M0120065J-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

Specifications

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Drain to Source Voltage (Vdss)

650 V

Drive Voltage (Max Rds On, Min Rds On)

15V

FET Feature

-

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

26 nC @ 15 V

Input Capacitance (Ciss) (Max) @ Vds

640 pF @ 400 V

Mounting Type

Surface Mount

Operating Temperature

-40°C ~ 175°C (TJ)

Package / Case

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Power Dissipation (Max)

86W (Tc)

Rds On (Max) @ Id, Vgs

157mOhm @ 6.76A, 15V

Supplier Device Package

TO-263-7

Technology

SiCFET (Silicon Carbide)

Vgs (Max)

+19V, -8V

Vgs(th) (Max) @ Id

3.6V @ 1.86mA