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C3M0040120D

C3M0040120D

MOSFET SiC, MOSFET, 40mohm, 1200V, TO-247-3, Industrial

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 15

Packaging Type

Tube

VendorPart#

1697-C3M0040120D-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Mouser Electronics

Part Status :

Mouser Electronics

Stock : 795

Packaging Type

VendorPart#

941-C3M0040120D

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Element14

Part Status : STOCKED

Element14

Stock : 15

Packaging Type

EACH

VendorPart#

4258102

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Channel Type	N Channel
Continuous Drain Current Id	66A
Current - Continuous Drain (Id) @ 25°C	66A (Tc)
Drain Source On State Resistance	0.04ohm
Drain Source Voltage Vds	1.2kV
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	15V
euEccn	NLR
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	101 nC @ 15 V
Gate Source Threshold Voltage Max	3.6V
hazardous	false
Input Capacitance (Ciss) (Max) @ Vds	2900 pF @ 1000 V
MOSFET Module Configuration	Single
Mounting Type	Through Hole
No. of Pins	3Pins
Operating Temperature	-40°C ~ 175°C (TJ)
Operating Temperature Max	175°C
Package / Case	TO-247-3
Power dissipation	326W
Power Dissipation (Max)	326W (Tc)
Product Range	C3M Series
productTraceability	No
Rds On (Max) @ Id, Vgs	53.5mOhm @ 33.3A, 15V
Rds(on) Test Voltage	15V
rohsCompliant	Yes
rohsPhthalatesCompliant	Yes
Supplier Device Package	TO-247-3
SVHC	No SVHC (14-Jun-2023)
tariffCode	85411000
Technology	SiCFET (Silicon Carbide)
Transistor Case Style	TO-247
usEccn	EAR99
Vgs (Max)	+15V, -4V
Vgs(th) (Max) @ Id	3.6V @ 9.5mA