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C3M0032120D

C3M0032120D

MOSFET 1.2kV 32mOHMS G3 SiC MOSFET

Element14

Part Status : STOCKED

Element14

Stock : 362

Packaging Type

EACH

VendorPart#

3257418

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 225

Packaging Type

Tube

VendorPart#

1697-C3M0032120D-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Mouser Electronics

Part Status :

Mouser Electronics

Stock : 587

Packaging Type

VendorPart#

941-C3M0032120D

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Continuous Drain Current Id	63A
Current - Continuous Drain (Id) @ 25°C	63A (Tc)
Drain Source Voltage Vds	1.2kV
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	15V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	114 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds	3357 pF @ 1000 V
MOSFET Configuration	Single
Mounting Type	Through Hole
No. of Pins	3Pins
On Resistance Rds(on)	0.032ohm
Operating Temperature	-40°C ~ 175°C (TJ)
Operating Temperature Max	175°C
Package / Case	TO-247-3
Power Dissipation (Max)	283W (Tc)
Power Dissipation Pd	283W
Product Range	C3M
Rds On (Max) @ Id, Vgs	43mOhm @ 40A, 15V
Rds(on) Test Voltage Vgs	15V
Supplier Device Package	TO-247-3
SVHC	No SVHC (16-Jul-2019)
Technology	SiCFET (Silicon Carbide)
Threshold Voltage Vgs	2.5V
Transistor Case Style	TO-247
Transistor Polarity	N Channel
Vgs (Max)	+15V, -4V
Vgs(th) (Max) @ Id	3.6V @ 11.5mA