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C3M0025065J1

650V 25 M SIC MOSFET

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 310

Packaging Type

Tube

VendorPart#

1697-C3M0025065J1-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	15V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	109 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds	2980 pF @ 400 V
Mounting Type	Surface Mount
Operating Temperature	-40°C ~ 150°C (TJ)
Package / Case	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Power Dissipation (Max)	271W (Tc)
Rds On (Max) @ Id, Vgs	34mOhm @ 33.5A, 15V
Supplier Device Package	TO-263-7
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	+19V, -8V
Vgs(th) (Max) @ Id	3.6V @ 9.22mA