Final Unit Price is calculated at the checkout is inclusive of Indian Customs Duty, International Freight, Insurance, Handling Fees and other charges

WNSCM80120R6Q

WNSCM80120R6Q

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W

Mfr Part #

WNSCM80120R6Q

Life Cycle

HSN Code

0000

Top notch industry experts are waiting to help you. Get a free quote today!

Suppliers

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

WNSCM80120R6Q

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

0

Specifications

Case

TO247-4

Drain current

32A

Drain-source voltage

1.2kV

Features of semiconductor devices

Kelvin terminal

Gate charge

59nC

Gate-source voltage

-10...25V

Kind of channel

enhanced

Kind of package

tube

Manufacturer

WeEn Semiconductors

Mounting

THT

On-state resistance

0.11Ω

Polarisation

Unipolar

Power dissipation

270W

Pulsed drain current

81A

Technology

SiC

Type of transistor

N-MOSFET