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WNSC2M45065B76J

WNSC2M45065B76J

Transistor: N-MOSFET; SiC; unipolar; 650V; 64A; Idm: 181A; 484W

Mfr Part #

WNSC2M45065B76J

Life Cycle

ONLY_FOR_SPECIAL_ORDER

HSN Code

0000

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Suppliers

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

WNSC2M45065B76J

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 800
Mult: 800

0

Specifications

Case

TO263-7

Drain current

64A

Drain-source voltage

650V

Features of semiconductor devices

Kelvin terminal

Gate charge

87nC

Gate-source voltage

-4...18V

Kind of channel

enhanced

Kind of package

reel

Kind of package

tape

Manufacturer

WeEn Semiconductors

Mounting

SMD

On-state resistance

49mΩ

Polarisation

Unipolar

Power dissipation

484W

Pulsed drain current

181A

Technology

SiC

Type of transistor

N-MOSFET