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WNSC2M40120R6Q

WNSC2M40120R6Q

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 100A; 405W

Mfr Part #

WNSC2M40120R6Q

Life Cycle

HSN Code

0000

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Suppliers

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

WNSC2M40120R6Q

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

0

Specifications

Case

TO247-4

Drain current

52A

Drain-source voltage

1.2kV

Features of semiconductor devices

Kelvin terminal

Gate charge

19nC

Gate-source voltage

-12...22V

Kind of channel

enhanced

Kind of package

tube

Manufacturer

WeEn Semiconductors

Mounting

THT

On-state resistance

55mΩ

Polarisation

Unipolar

Power dissipation

405W

Pulsed drain current

100A

Technology

SiC

Type of transistor

N-MOSFET