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SIDR5802EP-T1-RE3

SIDR5802EP-T1-RE3

MOSFET N-CHANNEL 80 V MOSFET PWR

Mouser Electronics

Part Status : New Product

Mouser Electronics

Stock : 3285

Packaging Type

VendorPart#

78-SIDR5802EP-T1-RE3

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

TME

Part Status :

TME

Stock : 0

Packaging Type

VendorPart#

SIDR5802EP-T1-RE3

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Quantity

Min: 3000

Mult: 3000

Order Value

Element14

Part Status : STOCKED

Element14

Stock : 6013

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

4006711

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Element14

Part Status : STOCKED

Element14

Stock : 6013

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

4006711RL

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 100

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 3000

Packaging Type

Tape & Reel (TR)

VendorPart#

742-SIDR5802EP-T1-RE3TR-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 3000

Mult: 3000

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 5710

Packaging Type

Cut Tape (CT)

VendorPart#

742-SIDR5802EP-T1-RE3CT-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 5710

Packaging Type

Digi-Reel®

VendorPart#

742-SIDR5802EP-T1-RE3DKR-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Channel Type	N Channel
Continuous Drain Current Id	153A
Current - Continuous Drain (Id) @ 25°C	34.2A (Ta), 153A (Tc)
Drain current	153A
Drain Source On State Resistance	0.0024ohm
Drain Source Voltage Vds	80V
Drain to Source Voltage (Vdss)	80 V
Drain-source voltage	80V
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
euEccn	NLR
FET Feature	-
FET Type	N-Channel
Gate charge	60nC
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Gate Source Threshold Voltage Max	4V
Gate-source voltage	±20V
hazardous	false
Input Capacitance (Ciss) (Max) @ Vds	3020 pF @ 40 V
Kind of channel	enhanced
Kind of package	tape
Kind of package	reel
Manufacturer	VISHAY
Mounting	SMD
Mounting Type	Surface Mount
MSL	MSL 1 - Unlimited
No. of Pins	8Pins
On-state resistance	4mΩ
Operating Temperature	-55°C ~ 175°C (TJ)
Operating Temperature Max	175°C
Package / Case	PowerPAK® SO-8
Packaging	Tape & Reel (TR)
Polarisation	Unipolar
Power dissipation	150W
Power Dissipation (Max)	7.5W (Ta), 150W (Tc)
Product Range	TrenchFET Gen V Series
productTraceability	No
Pulsed drain current	300A
Qualification	-
Rds On (Max) @ Id, Vgs	2.9mOhm @ 20A, 10V
Rds(on) Test Voltage	10V
rohsCompliant	Yes
rohsPhthalatesCompliant	Yes
Supplier Device Package	PowerPAK® SO-8DC
SVHC	Boric acid (14-Jun-2023)
tariffCode	85366990
Technology	TrenchFET®
Technology	MOSFET (Metal Oxide)
Transistor Case Style	PowerPAK SO
Transistor Mounting	Surface Mount
Type of transistor	N-MOSFET
usEccn	EAR99
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA