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SI7792DP-T1-GE3

MOSFET N-CH 30V 40.6A/60A PPAK

DigiKey Electronics

Part Status : Obsolete

DigiKey Electronics

* US shipping restriction from digikey

RESTRICTED*

Packaging Type

Tape & Reel (TR)

VendorPart#

SI7792DP-T1-GE3-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 0

Mult: 0

Order Value

Current - Continuous Drain (Id) @ 25°C	40.6A (Ta), 60A (Tc)
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	135 nC @ 10 V
Grade	-
Input Capacitance (Ciss) (Max) @ Vds	4735 pF @ 15 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Qualification	-
Rds On (Max) @ Id, Vgs	2.1mOhm @ 20A, 10V
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA