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SI4776DY-T1-GE3

MOSFET N-CHANNEL 30V 11.9A 8SO

DigiKey Electronics

Part Status : Obsolete

DigiKey Electronics

* US shipping restriction from digikey

RESTRICTED*

Packaging Type

Tape & Reel (TR)

VendorPart#

SI4776DY-T1-GE3TR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 0

Mult: 0

Order Value

Part Status : Obsolete

DigiKey Electronics

* US shipping restriction from digikey

RESTRICTED*

Packaging Type

Cut Tape (CT)

VendorPart#

SI4776DY-T1-GE3CT-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 0

Mult: 0

Order Value

Base Part Number	SI4776
Current - Continuous Drain (Id) @ 25°C	11.9A (Tc)
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	521pF @ 15V
Manufacturer	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TA)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Packaging	Tape & Reel (TR)
Part Status	Obsolete
Power Dissipation (Max)	4.1W (Tc)
Rds On (Max) @ Id, Vgs	16mOhm @ 10A, 10V
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.3V @ 1mA