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SI3867DV-T1-GE3

MOSFET P-CH 20V 3.9A 6TSOP

DigiKey Electronics

Part Status : Obsolete

DigiKey Electronics

* US shipping restriction from digikey

RESTRICTED*

Packaging Type

Tape & Reel (TR)

VendorPart#

SI3867DV-T1-GE3-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 0

Mult: 0

Order Value

Current - Continuous Drain (Id) @ 25°C	3.9A (Ta)
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 4.5 V
Grade	-
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	SOT-23-6 Thin, TSOT-23-6
Power Dissipation (Max)	1.1W (Ta)
Qualification	-
Rds On (Max) @ Id, Vgs	51mOhm @ 5.1A, 4.5V
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±12V
Vgs(th) (Max) @ Id	1.4V @ 250µA