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MXP120A250FW-GE3

MXP120A250FW-GE3

SiC MOSFETs 1200 V N-Channel SiC MOSFET

Category

Mfr Part #

MXP120A250FW-GE3

Life Cycle

New Product

HSN Code

00000000

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Suppliers

Mouser Electronics

Mouser Electronics

Stock : 0

Packaging Type

-

VendorPart#

78-MXP120A250FW

Factory Lead Time

238 Days

Ware House

US Warehouse

HTS Code

0000000000

Date Code

Within 2 years

Min: 1
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Tube

VendorPart#

742-MXP120A250FW-GE3-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

Specifications

Current - Continuous Drain (Id) @ 25°C

10.5A (Tc)

Drain to Source Voltage (Vdss)

1200 V

Drive Voltage (Max Rds On, Min Rds On)

18V, 20V

FET Feature

-

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

20.3 nC @ 18 V

Grade

-

Input Capacitance (Ciss) (Max) @ Vds

447 pF @ 800 V

Mounting Type

Through Hole

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

TO-247-3

Power Dissipation (Max)

56W (Tc)

Qualification

-

Rds On (Max) @ Id, Vgs

313mOhm @ 4A, 20V

Supplier Device Package

TO-247-3L

Technology

SiCFET (Silicon Carbide)

Vgs (Max)

+22V, -10V

Vgs(th) (Max) @ Id

3.1V @ 10mA