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IRLD110

MOSFET N-CH 100V 1A 4DIP

DigiKey Electronics

Part Status :

DigiKey Electronics

Stock : 0

Packaging Type

VendorPart#

IRLD110-ND

Factory Lead Time

0 Days

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Quantity

Min: 2500

Mult: 2500

Order Value

Base Part Number	IRLD110
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On, Min Rds On)	4V, 5V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	250pF @ 25V
Manufacturer	Vishay Siliconix
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	4-DIP (0.300", 7.62mm)
Packaging	tube
Part Status	Obsolete
Power Dissipation (Max)	1.3W (Ta)
Rds On (Max) @ Id, Vgs	540mOhm @ 600mA, 5V
Supplier Device Package	4-HVMDIP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±10V
Vgs(th) (Max) @ Id	2V @ 250µA