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IRFD912PBF

IRFD912PBF

Transistor: P-MOSFET; unipolar; -100V; -0.7A; 1.3W; DIP4

Mfr Part #

IRFD912PBF

Life Cycle

HSN Code

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Suppliers

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

IRFD9120PBF

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Min: 3
Mult: 1

0

Specifications

Case

DIP4

Drain current

-0.7A

Drain-source voltage

-100V

Gate charge

18nC

Gate-source voltage

±20V

Kind of channel

enhanced

Manufacturer

VISHAY

Mounting

THT

On-state resistance

600mΩ

Polarisation

Unipolar

Power dissipation

1.3W

Type of transistor

P-MOSFET