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TW083Z65C,S1F

TW083Z65C,S1F

SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 83mohm

Category

Mfr Part #

TW083Z65C,S1F

Mfr

Life Cycle

New Product

HSN Code

85412900

Toshiba

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Suppliers

Mouser Electronics

Part Status : New Product

Mouser Electronics

Stock : 40

Packaging Type

-

VendorPart#

757-TW083Z65CS1F

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 88

Packaging Type

Tube

VendorPart#

264-TW083Z65C,S1F-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

Specifications

Current - Continuous Drain (Id) @ 25°C

30A (Tc)
Drain to Source Voltage (Vdss)

650 V
Drive Voltage (Max Rds On, Min Rds On)

18V
FET Feature

-
FET Type

N-Channel
Gate Charge (Qg) (Max) @ Vgs

28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds

873 pF @ 400 V
Mounting Type

Through Hole
Operating Temperature

175°C
Package / Case

TO-247-4
Power Dissipation (Max)

111W (Tc)
Rds On (Max) @ Id, Vgs

118mOhm @ 15A, 18V
Supplier Device Package

TO-247-4L(X)
Technology

SiCFET (Silicon Carbide)
Vgs (Max)

+25V, -10V
Vgs(th) (Max) @ Id

5V @ 600µA