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GT50JR22(STA1,E,S)

GT50JR22(STA1,E,S)

IGBTs IGBT for Soft Switching Apps

Category

Mfr Part #

GT50JR22(STA1,E,S)

Mfr

Life Cycle

HSN Code

85412900

Toshiba

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Suppliers

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 19

Packaging Type

Tube

VendorPart#

264-GT50JR22(STA1ES)-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

Mouser Electronics

Part Status :

Mouser Electronics

Stock : 157

Packaging Type

-

VendorPart#

757-GT50JR22(STA1ES)

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

Element14

Part Status : STOCKED

Element14

Stock : 311

Packaging Type

EACH

VendorPart#

3872260

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 1
Mult: 1

TME

Part Status :

TME

Stock : 29

Packaging Type

-

VendorPart#

GT50JR22

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

Specifications

Automotive Qualification Standard

-
Case

TO3PN
Collector current

44A
Collector Emitter Saturation Voltage Vce(on)

1.55V
Collector Emitter Voltage V(br)ceo

600V
Collector-emitter voltage

600V
Current - Collector (Ic) (Max)

50 A
Current - Collector Pulsed (Icm)

100 A
DC Collector Current

50A
Gate-emitter voltage

±25V
IGBT Type

-
Input Type

Standard
Kind of package

tube
Manufacturer

TOSHIBA
Mounting

THT
Mounting Type

Through Hole
No. of Pins

3Pins
Operating Temperature

175°C (TJ)
Operating Temperature Max

175°C
Package / Case

TO-3P-3, SC-65-3
Packaging

tube
Power - Max

230 W
Power dissipation

115W
Power Dissipation Pd

230W
Product Range

-
Pulsed collector current

100A
Supplier Device Package

TO-3P(N)
SVHC

No SVHC (08-Jul-2021)
Switching Energy

-
Td (on/off) @ 25°C

-
Test Condition

-
Transistor Case Style

TO-3PN
Turn-off time

330ns
Turn-on time

250ns
Type of transistor

IGBT
Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 50A
Voltage - Collector Emitter Breakdown (Max)

600 V