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XP222P0801TR-G

XP222P0801TR-G

Transistor: P-MOSFET; unipolar; -20V; -0.8A; Idm: -1.6A; 0.4W

TME

Part Status :

TME

Stock : 0

Packaging Type

VendorPart#

XP222P0801TR-G

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Quantity

Min: 10

Mult: 5

Order Value

Element14

Part Status : STOCKED

Element14

Stock : 1609

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

3577859RL

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 100

Mult: 5

Order Value

Element14

Part Status : STOCKED

Element14

Stock : 1609

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

3577859

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 5

Mult: 5

Order Value

Specifications

Case	SOT23-3
Channel Type	P Channel
Continuous Drain Current Id	800mA
Drain current	-0.8A
Drain Source On State Resistance	0.3ohm
Drain Source Voltage Vds	20V
Drain-source voltage	-20V
euEccn	NLR
Features of semiconductor devices	ESD protected gate
Gate Source Threshold Voltage Max	800mV
Gate-source voltage	±8V
hazardous	false
Kind of channel	enhanced
Kind of package	reel
Kind of package	tape
Manufacturer	TOREX
Mounting	SMD
MSL	MSL 1 - Unlimited
No. of Pins	3Pins
On-state resistance	1.2Ω
Operating Temperature Max	150°C
Polarisation	Unipolar
Power dissipation	0.4W
Power dissipation	400mW
Product Range	XP222P0801xx-G
productTraceability	No
Pulsed drain current	-1.6A
Qualification	-
Rds(on) Test Voltage	4.5V
rohsCompliant	Yes
rohsPhthalatesCompliant	Yes
SVHC	No SVHC (14-Jun-2023)
tariffCode	85411000
Transistor Case Style	SOT-23
Transistor Mounting	Surface Mount
Type of transistor	P-MOSFET
usEccn	EAR99