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TSM60N600CI C0G

TSM60N600CI C0G

MOSFET 600V, 8A, Single N-Channel Power MOSFET

DigiKey Electronics

Part Status : Obsolete

DigiKey Electronics

Stock : 0

Packaging Type

Tube

VendorPart#

TSM60N600CIC0G-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 0

Mult: 4000

Order Value

Mouser Electronics

Part Status : Obsolete

Mouser Electronics

Stock : 0

Packaging Type

VendorPart#

N/A

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 0

Mult: 0

Order Value

TME

Part Status :

TME

Stock : 0

Packaging Type

VendorPart#

TSM60N600CI-C0G

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Case	TO220FP
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drain current	4.8A
Drain to Source Voltage (Vdss)	600 V
Drain-source voltage	600V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate charge	13nC
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10 V
Gate-source voltage	±30V
Input Capacitance (Ciss) (Max) @ Vds	743 pF @ 100 V
Kind of channel	enhanced
Manufacturer	TAIWAN SEMICONDUCTOR
Mounting	THT
Mounting Type	Through Hole
On-state resistance	600mΩ
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-220-3 Full Pack, Isolated Tab
Packaging	tube
Polarisation	Unipolar
Power dissipation	32W
Power Dissipation (Max)	83W (Tc)
Rds On (Max) @ Id, Vgs	600mOhm @ 4A, 10V
Supplier Device Package	ITO-220AB
Technology	MOSFET (Metal Oxide)
Type of transistor	N-MOSFET
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4V @ 250µA