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STP65N150M9

STP65N150M9

MOSFET N-channel 650 V, 128 mOhm typ., 20 A MDmesh M9 Power MOSFET

Mouser Electronics

Part Status :

Mouser Electronics

* Not available for purchase by distributors.

RESTRICTED*

Packaging Type

VendorPart#

511-STP65N150M9

Factory Lead Time

140 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Element14

Part Status : STOCKED

Element14

Stock : 156

Packaging Type

EACH

VendorPart#

4142508

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 430

Packaging Type

Tube

VendorPart#

497-STP65N150M9-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

TME

Part Status :

TME

Stock : 0

Packaging Type

VendorPart#

STP65N150M9

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Case	TO220-3
Channel Type	N Channel
Continuous Drain Current Id	20A
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drain current	12.5A
Drain Source On State Resistance	0.128ohm
Drain Source Voltage Vds	650V
Drain to Source Voltage (Vdss)	650 V
Drain-source voltage	650V
Drive Voltage (Max Rds On, Min Rds On)	10V
euEccn	NLR
Features of semiconductor devices	ESD protected gate
FET Feature	-
FET Type	N-Channel
Gate charge	32nC
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 10 V
Gate Source Threshold Voltage Max	4.2V
Gate-source voltage	±30V
hazardous	false
Input Capacitance (Ciss) (Max) @ Vds	1239 pF @ 400 V
Kind of channel	enhanced
Kind of package	tube
Manufacturer	STMicroelectronics
Mounting	THT
Mounting Type	Through Hole
No. of Pins	3Pins
On-state resistance	0.15Ω
Operating Temperature	150°C (TJ)
Operating Temperature Max	150°C
Package / Case	TO-220-3
Polarisation	Unipolar
Power dissipation	140W
Power Dissipation (Max)	140W (Tc)
Product Range	-
productTraceability	No
Pulsed drain current	60A
Qualification	-
Rds On (Max) @ Id, Vgs	150mOhm @ 10A, 10V
Rds(on) Test Voltage	10V
rohsCompliant	Yes
rohsPhthalatesCompliant	Yes
Supplier Device Package	TO-220
tariffCode	85411000
Technology	MOSFET (Metal Oxide)
Technology	MDmesh™ M9
Transistor Case Style	TO-220
Transistor Mounting	Through Hole
Type of transistor	N-MOSFET
usEccn	EAR99
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4.2V @ 250µA