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SGT120R65AL

SGT120R65AL

MOSFET 650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor

Category

Mfr Part #

SGT120R65AL

Life Cycle

New Product

HSN Code

85412900

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Suppliers

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Cut Tape (CT)

VendorPart#

497-SGT120R65ALCT-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Tape & Reel (TR)

VendorPart#

497-SGT120R65ALTR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 3000
Mult: 3000

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Digi-Reel®

VendorPart#

497-SGT120R65ALDKR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

SGT120R65AL

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

0

Mouser Electronics

Mouser Electronics

* Not available for purchase by distributors.

RESTRICTED*


Packaging Type

-

VendorPart#

511-SGT120R65AL

Factory Lead Time

154 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

Specifications

Case

PowerFLAT 5x6

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drain current

9A

Drain to Source Voltage (Vdss)

650 V

Drain-source voltage

650V

Drive Voltage (Max Rds On, Min Rds On)

6V

Features of semiconductor devices

Kelvin terminal

FET Feature

-

FET Type

N-Channel

Gate charge

3nC

Gate Charge (Qg) (Max) @ Vgs

3 nC @ 6 V

Gate-source voltage

-10...7V

Input Capacitance (Ciss) (Max) @ Vds

125 pF @ 400 V

Kind of channel

enhanced

Kind of package

tape

Kind of transistor

HEMT

Manufacturer

STMicroelectronics

Mounting

SMD

Mounting Type

Surface Mount

On-state resistance

0.12Ω

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

8-PowerVDFN

Packaging

Tape & Reel (TR)

Polarisation

Unipolar

Power dissipation

192W

Power Dissipation (Max)

192W (Tc)

Pulsed drain current

36A

Rds On (Max) @ Id, Vgs

120mOhm @ 5A, 6V

Supplier Device Package

PowerFlatâ„¢ (5x6) HV

Technology

GaNFET (Gallium Nitride)

Technology

GaN

Type of transistor

N-JFET

Vgs (Max)

+6V, -10V

Vgs(th) (Max) @ Id

2.6V @ 12mA