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SCTWA90N65G2V-4

SCTWA90N65G2V-4

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ 119 A

Category

Mfr Part #

SCTWA90N65G2V-4

Life Cycle

HSN Code

85412900

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Suppliers

Mouser Electronics

Mouser Electronics

* Not available for purchase by distributors.

RESTRICTED*


Packaging Type

-

VendorPart#

511-SCTWA90N65G2V-4

Factory Lead Time

224 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Tube

VendorPart#

497-SCTWA90N65G2V-4-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 600
Mult: 600

0

Element14

Element14

Stock : 12

Packaging Type

EACH

VendorPart#

3764236

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 1
Mult: 1

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

SCTWA90N65G2V-4

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

0

Specifications

Current - Continuous Drain (Id) @ 25°C

119A (Tc)

Drain to Source Voltage (Vdss)

650V

FET Feature

-

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

157nC @ 18V

Input Capacitance (Ciss) (Max) @ Vds

3380pF @ 400V

Mounting Type

Through Hole

Operating Temperature

-55°C ~ 200°C (TJ)

Package / Case

TO-247-3

Packaging

tube

Part Status

Active

Power Dissipation (Max)

565W (Tc)

Rds On (Max) @ Id, Vgs

24mOhm @ 50A, 18V

Supplier Device Package

HiP247â„¢ Long Leads

Technology

SiCFET (Silicon Carbide)

Vgs (Max)

+22V, -10V

Vgs(th) (Max) @ Id

5V @ 1mA