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SCTWA60N120G2-4

SCTWA60N120G2-4

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A

Element14

Part Status : STOCKED

Element14

Stock : 0

Packaging Type

EACH

VendorPart#

3775644

Factory Lead Time

330 Days

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 238

Packaging Type

Tube

VendorPart#

497-SCTWA60N120G2-4-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Mouser Electronics

Part Status :

Mouser Electronics

* Not available for purchase by distributors.

RESTRICTED*

Packaging Type

VendorPart#

511-SCTWA60N120G2-4

Factory Lead Time

224 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

TME

Part Status :

TME

Stock : 0

Packaging Type

VendorPart#

SCTWA60N120G2-4

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Continuous Drain Current Id	60A
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drain Source Voltage Vds	1.2kV
Drain to Source Voltage (Vdss)	1200V
Drive Voltage (Max Rds On, Min Rds On)	18V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	94nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds	1969pF @ 800V
MOSFET Configuration	Single
Mounting Type	Through Hole
No. of Pins	4Pins
On Resistance Rds(on)	0.035ohm
Operating Temperature	-55°C ~ 200°C (TJ)
Operating Temperature Max	200°C
Package / Case	TO-247-4
Packaging	tube
Part Status	Active
Power Dissipation (Max)	388W (Tc)
Power Dissipation Pd	389W
Product Range	-
Rds On (Max) @ Id, Vgs	52mOhm @ 30A, 18V
Rds(on) Test Voltage Vgs	18V
Supplier Device Package	TO-247-4
SVHC	No SVHC (19-Jan-2021)
Technology	SiCFET (Silicon Carbide)
Threshold Voltage Vgs	3V
Transistor Case Style	HiP247
Transistor Polarity	N Channel
Vgs (Max)	+22V, -10V
Vgs(th) (Max) @ Id	5V @ 1mA