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SCTWA35N65G2V

SCTWA35N65G2V

SiC MOSFETs 650 V 45 A 75 mOhm

Category

Mfr Part #

SCTWA35N65G2V

Life Cycle

HSN Code

85412900

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Suppliers

Mouser Electronics

Mouser Electronics

* Not available for purchase by distributors.

RESTRICTED*


Packaging Type

-

VendorPart#

511-SCTWA35N65G2V

Factory Lead Time

224 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

Element14

Element14

Stock : 182

Packaging Type

EACH

VendorPart#

3764235

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 1
Mult: 1

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

-

VendorPart#

497-SCTWA35N65G2V-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Min: 1
Mult: 1

0

Specifications

Continuous Drain Current Id

45A

Current - Continuous Drain (Id) @ 25°C

45A (Tc)

Drain Source Voltage Vds

650V

Drain to Source Voltage (Vdss)

650V

Drive Voltage (Max Rds On, Min Rds On)

18V, 20V

FET Feature

-

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

73nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds

73000pF @ 400V

MOSFET Configuration

Single

Mounting Type

Through Hole

No. of Pins

3Pins

On Resistance Rds(on)

0.045ohm

Operating Temperature

-55°C ~ 175°C (TJ)

Operating Temperature Max

200°C

Package / Case

TO-247-3

Packaging

tube

Part Status

Active

Power Dissipation (Max)

208W (Tc)

Power Dissipation Pd

240W

Product Range

-

Rds On (Max) @ Id, Vgs

72mOhm @ 20A, 20V

Rds(on) Test Voltage Vgs

20V

Supplier Device Package

TO-247 Long Leads

SVHC

No SVHC (19-Jan-2021)

Technology

SiCFET (Silicon Carbide)

Threshold Voltage Vgs

3.2V

Transistor Case Style

HiP247LL

Transistor Polarity

N Channel

Vgs (Max)

+20V, -5V

Vgs(th) (Max) @ Id

3.2V @ 1mA