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SCTW40N120G2V

SCTW40N120G2V

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 62 mOhm typ 36 A

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 522

Packaging Type

Tube

VendorPart#

497-SCTW40N120G2V-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Mouser Electronics

Part Status :

Mouser Electronics

* Not available for purchase by distributors.

RESTRICTED*

Packaging Type

VendorPart#

511-SCTW40N120G2V

Factory Lead Time

224 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Element14

Part Status : STOCKED

Element14

Stock : 430

Packaging Type

EACH

VendorPart#

3748722

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

TME

Part Status :

TME

Stock : 0

Packaging Type

VendorPart#

SCTW40N120G2V

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Drain to Source Voltage (Vdss)	1200kV
Drive Voltage (Max Rds On, Min Rds On)	18V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	61nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds	1233pF @ 800V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 200°C (TJ)
Package / Case	TO-247-3
Packaging	tube
Part Status	Active
Power Dissipation (Max)	278W (Tc)
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 18V
Supplier Device Package	HiP247™
Technology	SiC (Silicon Carbide Junction Transistor)
Vgs (Max)	+22V, -10V
Vgs(th) (Max) @ Id	4.9V @ 1mA