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SCTL90N65G2V

SCTL90N65G2V

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A

Category

Mfr Part #

SCTL90N65G2V

Life Cycle

HSN Code

85412900

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Suppliers

Mouser Electronics

Mouser Electronics

* Not available for purchase by distributors.

RESTRICTED*


Packaging Type

-

VendorPart#

511-SCTL90N65G2V

Factory Lead Time

315 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

Element14

Element14

Stock : 1857

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

3748721

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 1
Mult: 1

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

SCTL90N65G2V

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Digi-Reel®

VendorPart#

497-SCTL90N65G2VDKR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Cut Tape (CT)

VendorPart#

497-SCTL90N65G2VCT-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Tape & Reel (TR)

VendorPart#

497-SCTL90N65G2VTR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 3000
Mult: 3000

0

Specifications

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drain to Source Voltage (Vdss)

650 V

Drive Voltage (Max Rds On, Min Rds On)

18V

FET Feature

-

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

157 nC @ 18 V

Input Capacitance (Ciss) (Max) @ Vds

3380 pF @ 400 V

Kind of channel

enhanced

Kind of package

tape

Manufacturer

STMicroelectronics

Mounting

SMD

Mounting Type

Surface Mount

Operating Temperature

-55°C ~ 175°C (TJ)

Package / Case

8-PowerVDFN

Polarisation

Unipolar

Power Dissipation (Max)

935W (Tc)

Rds On (Max) @ Id, Vgs

24mOhm @ 40A, 18V

Supplier Device Package

PowerFlatâ„¢ (8x8) HV

Technology

SiCFET (Silicon Carbide)

Type of transistor

N-MOSFET

Vgs (Max)

+22V, -10V

Vgs(th) (Max) @ Id

5V @ 1mA