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SCTL35N65G2V

SCTL35N65G2V

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ 40 A

Category

Mfr Part #

SCTL35N65G2V

Life Cycle

HSN Code

85412900

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Suppliers

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

-

VendorPart#

497-SCTL35N65G2VTR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Min: 3000
Mult: 3000

0

Element14

Element14

Stock : 2944

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

3764234RL

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 10
Mult: 1

Element14

Element14

Stock : 2944

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

3764234

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 1
Mult: 1

Mouser Electronics

Mouser Electronics

* Not available for purchase by distributors.

RESTRICTED*


Packaging Type

-

VendorPart#

511-SCTL35N65G2V

Factory Lead Time

315 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 83

Packaging Type

-

VendorPart#

497-SCTL35N65G2VDKR-ND

Ware House

US Warehouse

Date Code

Min: 1
Mult: 1

DigiKey Electronics

DigiKey Electronics

Stock : 83

Packaging Type

-

VendorPart#

497-SCTL35N65G2VCT-ND

Ware House

US Warehouse

Date Code

Min: 1
Mult: 1

Specifications

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drain to Source Voltage (Vdss)

650V

FET Feature

-

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

73nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds

1370pF @ 400V

Mounting Type

Surface Mount

Operating Temperature

-55°C ~ 175°C (TJ)

Package / Case

8-PowerVDFN

Packaging

Tape & Reel (TR)

Part Status

Active

Power Dissipation (Max)

417W (Tc)

Rds On (Max) @ Id, Vgs

67mOhm @ 20A, 20V

Supplier Device Package

PowerFlatâ„¢ (8x8) HV

Technology

SiCFET (Silicon Carbide)

Vgs (Max)

+22V, -10V

Vgs(th) (Max) @ Id

5V @ 1mA