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SCTH60N120G2-7

SCTH60N120G2-7

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an H2PAK-7 package

DigiKey Electronics

Part Status : Active

DigiKey Electronics

* US shipping restriction from digikey

RESTRICTED*

Packaging Type

Tape & Reel (TR)

VendorPart#

497-SCTH60N120G2-7TR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 0

Mult: 0

Order Value

Mouser Electronics

Part Status : Verify Status with Factory

Mouser Electronics

* Not available for purchase by distributors.

RESTRICTED*

Packaging Type

VendorPart#

511-SCTH60N120G2-7

Factory Lead Time

224 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1000

Mult: 1000

Order Value

TME

Part Status :

TME

Stock : 0

Packaging Type

VendorPart#

SCTH60N120G2-7

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	94 nC @ 18 V
Grade	-
Input Capacitance (Ciss) (Max) @ Vds	1969 pF @ 800 V
Kind of channel	enhancement
Kind of package	tape
Manufacturer	STMicroelectronics
Mounting	SMD
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Polarisation	Unipolar
Power Dissipation (Max)	390W (Tc)
Qualification	-
Rds On (Max) @ Id, Vgs	52mOhm @ 30A, 10V
Supplier Device Package	H2PAK-7
Technology	SiCFET (Silicon Carbide)
Type of transistor	N-MOSFET
Vgs (Max)	+22V, -10V
Vgs(th) (Max) @ Id	5V @ 1mA