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SCTH35N65G2V-7

SCTH35N65G2V-7

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ 45 A

Element14

Part Status : STOCKED

Element14

Stock : 940

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

3387271RL

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 10

Mult: 1

Order Value

Mouser Electronics

Part Status :

Mouser Electronics

* Not available for purchase by distributors.

RESTRICTED*

Packaging Type

VendorPart#

511-SCTH35N65G2V-7

Factory Lead Time

315 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 1694

Packaging Type

Cut Tape (CT)

VendorPart#

497-SCTH35N65G2V-7CT-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 1000

Packaging Type

Tape & Reel (TR)

VendorPart#

497-SCTH35N65G2V-7TR-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1000

Mult: 1000

Order Value

Element14

Part Status : STOCKED

Element14

Stock : 940

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

3387271

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 1694

Packaging Type

Digi-Reel®

VendorPart#

497-SCTH35N65G2V-7DKR-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Channel Type	N Channel
Current - Continuous Drain (Id) @ 25°C	45A (Tc)
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18V, 20V
euEccn	NLR
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	73 nC @ 20 V
Grade	-
hazardous	false
Input Capacitance (Ciss) (Max) @ Vds	1370 pF @ 400 V
MOSFET Module Configuration	Single
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Power Dissipation (Max)	208W (Tc)
productTraceability	No
Qualification	-
Rds On (Max) @ Id, Vgs	67mOhm @ 20A, 20V
rohsCompliant	Yes
rohsPhthalatesCompliant	Yes
Supplier Device Package	H2PAK-7
tariffCode	85414090
Technology	SiCFET (Silicon Carbide)
Transistor Case Style	H2PAK
usEccn	EAR99
Vgs (Max)	+22V, -10V
Vgs(th) (Max) @ Id	5V @ 1mA