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SCT012H90G3AG

SCT012H90G3AG

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package

Category

Mfr Part #

SCT012H90G3AG

Life Cycle

New Product

HSN Code

85412900

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Suppliers

Element14

Element14

Stock : 34

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

4458499

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 1
Mult: 1

Element14

Element14

Stock : 34

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

4458499RL

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 10
Mult: 1

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

SCT012H90G3AG

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Tape & Reel (TR)

VendorPart#

497-SCT012H90G3AGTR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1000
Mult: 1000

0

Mouser Electronics

Mouser Electronics

* Not available for purchase by distributors.

RESTRICTED*


Packaging Type

-

VendorPart#

511-SCT012H90G3AG

Factory Lead Time

224 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Digi-Reel®

VendorPart#

497-SCT012H90G3AGDKR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Cut Tape (CT)

VendorPart#

497-SCT012H90G3AGCT-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

Specifications

Channel Type

N Channel

Continuous Drain Current Id

110A

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drain Source On State Resistance

0.0158ohm

Drain Source Voltage Vds

900V

Drain to Source Voltage (Vdss)

900 V

Drive Voltage (Max Rds On, Min Rds On)

15V, 18V

euEccn

NLR

FET Feature

-

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

138 nC @ 18 V

Gate Source Threshold Voltage Max

4.2V

Grade

automotive

hazardous

false

Input Capacitance (Ciss) (Max) @ Vds

3880 pF @ 600 V

MOSFET Module Configuration

Single

Mounting Type

Surface Mount

No. of Pins

7Pins

Operating Temperature

-55°C ~ 175°C (TJ)

Operating Temperature Max

175°C

Package / Case

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Power dissipation

625W

Power Dissipation (Max)

625W (Tc)

Product Range

-

productTraceability

No

Qualification

AEC-Q101

Rds On (Max) @ Id, Vgs

15.8mOhm @ 60A, 18V

Rds(on) Test Voltage

18V

rohsCompliant

Y-EX

rohsPhthalatesCompliant

Yes

Supplier Device Package

H2PAK-7

SVHC

No SVHC (21-Jan-2025)

tariffCode

85411000

Technology

SiCFET (Silicon Carbide)

Transistor Case Style

H2PAK

usEccn

EAR99

Vgs (Max)

+18V, -5V

Vgs(th) (Max) @ Id

4.2V @ 10mA