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GD600SGU120C2S

GD600SGU120C2S

Module: IGBT; single transistor; single transistor; Urmax: 1200V

Mfr Part #

GD600SGU120C2S

Life Cycle

ONLY_FOR_SPECIAL_ORDER

HSN Code

0000

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Suppliers

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

GD600SGU120C2S

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 12
Mult: 12

0

Element14

Element14

Stock : 0

Packaging Type

EACH

VendorPart#

3549268

Factory Lead Time

162 Days

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 1
Mult: 1

0

Specifications

Case

C2 62mm

Collector current

600A

Collector Emitter Saturation Voltage

2.9V

Collector Emitter Voltage Max

1.2kV

Continuous Collector Current

830A

Electrical mounting

screw

euEccn

NLR

Gate-emitter voltage

±20V

hazardous

false

IGBT Configuration

Single

IGBT Technology

NPT Ultra Fast IGBT

IGBT Termination

Stud

Manufacturer

STARPOWER SEMICONDUCTOR LTD.

Max. off-state voltage

1200V

Mechanical mounting

screw

Operating Temperature Max

125°C

Power dissipation

4.032kW

Product Range

-

productTraceability

No

Pulsed collector current

1200A

rohsCompliant

Yes

rohsPhthalatesCompliant

Yes

Semiconductor structure

single transistor

SVHC

No SVHC (25-Jun-2020)

tariffCode

85411000

Technology

NPT Ultra Fast IGBT

Topology

single transistor

Transistor Case Style

Module

Transistor Mounting

Panel

Type of module

IGBT

usEccn

EAR99