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GD650HFX170P1S

GD650HFX170P1S

Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 650A

Mfr Part #

GD650HFX170P1S

Life Cycle

ONLY_FOR_SPECIAL_ORDER

HSN Code

0000

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Suppliers

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

GD650HFX170P1S

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 9
Mult: 9

0

Specifications

Case

P1.0

Collector current

650A

Electrical mounting

screw

Gate-emitter voltage

±20V

Manufacturer

STARPOWER SEMICONDUCTOR

Max. off-state voltage

1.7kV

Mechanical mounting

screw

Pulsed collector current

1.3kA

Semiconductor structure

transistor/transistor

Technology

Trench FS IGBT

Topology

IGBT half-bridge

Type of module

IGBT