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GD15PJY120L2S

GD15PJY120L2S

Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2

Mfr Part #

GD15PJY120L2S

Life Cycle

HSN Code

0000

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Suppliers

TME

TME

Stock : 21

Packaging Type

-

VendorPart#

GD15PJY120L2S

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

Specifications

Case

L2.2

Collector current

15A

Electrical mounting

Press-in PCB

Gate-emitter voltage

±20V

Manufacturer

STARPOWER SEMICONDUCTOR

Max. off-state voltage

1.2kV

Mechanical mounting

screw

Pulsed collector current

30A

Semiconductor structure

diode/transistor

Technology

Advanced Trench FS IGBT

Topology

boost chopper

Topology

IGBT three-phase bridge OE output

Topology

NTC thermistor

Topology

three-phase diode bridge

Type of module

IGBT