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GD1200HFY120C3S

GD1200HFY120C3S

Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1200A

Mfr Part #

GD1200HFY120C3S

Life Cycle

ONLY_FOR_SPECIAL_ORDER

HSN Code

0000

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Suppliers

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

GD1200HFY120C3S

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 10
Mult: 10

0

Specifications

Case

C3 130mm

Collector current

1.2kA

Electrical mounting

screw

Gate-emitter voltage

±20V

Manufacturer

STARPOWER SEMICONDUCTOR

Max. off-state voltage

1.2kV

Mechanical mounting

screw

Pulsed collector current

2.4kA

Semiconductor structure

transistor/transistor

Technology

Advanced Trench FS IGBT

Topology

IGBT half-bridge

Type of module

IGBT