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S2M0080120N

S2M0080120N

Module; single transistor; 1.2kV; 25A; SOT227B; screw; Idm: 82A

Mfr Part #

S2M0080120N

Mfr

Life Cycle

HSN Code

85412900

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Suppliers

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Bulk

VendorPart#

1655-S2M0080120N-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

S2M0080120N-SMC

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

0

Specifications

Case

SOT227B

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Drain current

25A

Drain to Source Voltage (Vdss)

1200 V

Drain-source voltage

1.2kV

Drive Voltage (Max Rds On, Min Rds On)

20V

Electrical mounting

screw

Features of semiconductor devices

Kelvin terminal

FET Feature

-

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

54 nC @ 20 V

Gate-source voltage

-5...20V

Input Capacitance (Ciss) (Max) @ Vds

1324 pF @ 1000 V

Kind of channel

enhanced

Manufacturer

SMC Diode Solutions

Mechanical mounting

screw

Mounting Type

Chassis Mount

On-state resistance

137mΩ

Operating Temperature

-55°C ~ 175°C (TJ)

Package / Case

SOT-227-4, miniBLOC

Polarisation

Unipolar

Power dissipation

176W

Power Dissipation (Max)

176W (Tc)

Pulsed drain current

82A

Rds On (Max) @ Id, Vgs

100mOhm @ 20A, 20V

Semiconductor structure

single transistor

Supplier Device Package

SOT-227

Technology

SiCFET (Silicon Carbide)

Technology

SiC

Type of module

MOSFET transistor

Vgs (Max)

+20V, -5V

Vgs(th) (Max) @ Id

4V @ 10mA