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S2M0040120K-1

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S2M0040120K-1

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 160A; 320.5W

Category

THT N Channel Transistors

Mfr Part #

S2M0040120K-1

Mfr

Life Cycle

HSN Code

85412900

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Suppliers

DigiKey Electronics

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 0

Packaging Type

Tube

VendorPart#

1655-S2M0040120K-1-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

0

TME

TME

Part Status :

TME

Stock : 50

Packaging Type

-

VendorPart#

S2M0040120K-1-SMC

Ware House

Poland Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Case	TO247-4
Current - Continuous Drain (Id) @ 25°C	55A (Tj)
Drain current	55A
Drain to Source Voltage (Vdss)	1200 V
Drain-source voltage	1.2kV
Drive Voltage (Max Rds On, Min Rds On)	20V
Features of semiconductor devices	Kelvin terminal
FET Feature	-
FET Type	N-Channel
Gate charge	118nC
Gate Charge (Qg) (Max) @ Vgs	92.1 nC @ 20 V
Gate-source voltage	-5...20V
Grade	-
Input Capacitance (Ciss) (Max) @ Vds	1904 pF @ 1000 V
Kind of channel	enhanced
Kind of package	tube
Manufacturer	SMC Diode Solutions
Mounting	THT
Mounting Type	Through Hole
On-state resistance	40mΩ
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-247-4
Polarisation	Unipolar
Power dissipation	320.5W
Power Dissipation (Max)	348W (Tc)
Pulsed drain current	160A
Qualification	-
Rds On (Max) @ Id, Vgs	52mOhm @ 40A, 20V
Supplier Device Package	TO-247-4
Technology	SiCFET (Silicon Carbide)
Technology	SiC
Type of transistor	N-MOSFET
Vgs (Max)	+20V, -5V
Vgs(th) (Max) @ Id	4V @ 10mA