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SCT4018KEC11

SCT4018KEC11

SiC MOSFETs TO247 1.2KV 81A N-CH SIC

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 0

Packaging Type

Tube

VendorPart#

846-SCT4018KEC11-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Element14

Part Status : STOCKED

Element14

Stock : 545

Packaging Type

EACH

VendorPart#

3935389

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Mouser Electronics

Part Status : New Product

Mouser Electronics

Stock : 801

Packaging Type

VendorPart#

755-SCT4018KEC11

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Channel Type	N Channel
Continuous Drain Current Id	81A
Current - Continuous Drain (Id) @ 25°C	81A (Tj)
Drain Source On State Resistance	0.018ohm
Drain Source Voltage Vds	1.2kV
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18V
euEccn	NLR
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	170 nC @ 18 V
Gate Source Threshold Voltage Max	4.8V
hazardous	false
Input Capacitance (Ciss) (Max) @ Vds	4532 pF @ 800 V
MOSFET Module Configuration	Single
Mounting Type	Through Hole
MSL	-
No. of Pins	3Pins
Operating Temperature	175°C (TJ)
Operating Temperature Max	175°C
Package / Case	TO-247-3
Packaging	tube
Power dissipation	312W
Power Dissipation (Max)	312W
Product Range	-
productTraceability	No
Rds On (Max) @ Id, Vgs	23.4mOhm @ 42A, 18V
Rds(on) Test Voltage	18V
rohsCompliant	Yes
rohsPhthalatesCompliant	Yes
Supplier Device Package	TO-247N
SVHC	Lead (17-Jan-2023)
tariffCode	85411000
Technology	SiCFET (Silicon Carbide)
Transistor Case Style	TO-247N
usEccn	EAR99
Vgs (Max)	+21V, -4V
Vgs(th) (Max) @ Id	4.8V @ 22.2mA