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SCT2H12NWBTL1

SCT2H12NWBTL1

SICFET N-CH 1700V 4A TO268

Mfr Part #

SCT2H12NWBTL1

Life Cycle

Active

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Suppliers

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Tape & Reel (TR)

VendorPart#

846-SCT2H12NWBTL1TR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Within 2 years

Min: 800
Mult: 800

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Cut Tape (CT)

VendorPart#

846-SCT2H12NWBTL1CT-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Within 2 years

Min: 1
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Digi-Reel®

VendorPart#

846-SCT2H12NWBTL1DKR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Within 2 years

Min: 1
Mult: 1

0

Specifications

Current - Continuous Drain (Id) @ 25°C

3.9A (Tc)

Drain to Source Voltage (Vdss)

1700 V

Drive Voltage (Max Rds On, Min Rds On)

18V

FET Feature

-

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

24 nC @ 18 V

Grade

-

Input Capacitance (Ciss) (Max) @ Vds

197 pF @ 800 V

Mounting Type

Surface Mount

Operating Temperature

175°C (TJ)

Package / Case

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Power Dissipation (Max)

39W (Tc)

Qualification

-

Rds On (Max) @ Id, Vgs

1.5Ohm @ 1.1A, 18V

Supplier Device Package

TO-263CA-7LSHYAD

Technology

SiCFET (Silicon Carbide)

Vgs (Max)

+22V, -6V

Vgs(th) (Max) @ Id

4V @ 410µA