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HP8MB5TB1

HP8MB5TB1

MOSFET 40V 16.5A, Dual Nch+Pch, HSOP8, Power MOSFET: HP8MB5 is a low on-resistance MOSFET ideal for switching applications.

Category

Mfr Part #

HP8MB5TB1

Mfr

Life Cycle

New Product

HSN Code

85412900

ROHM Semiconductor

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Suppliers

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 2475

Packaging Type

Digi-Reel®

VendorPart#

846-HP8MB5TB1DKR-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 2475

Packaging Type

Cut Tape (CT)

VendorPart#

846-HP8MB5TB1CT-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

Element14

Part Status : STOCKED

Element14

Stock : 70

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

4263608

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 1
Mult: 1

Mouser Electronics

Part Status : New Product

Mouser Electronics

Stock : 4985

Packaging Type

-

VendorPart#

755-HP8MB5TB1

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 2475

Packaging Type

Tape & Reel (TR)

VendorPart#

846-HP8MB5TB1TR-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 2500
Mult: 2500

Element14

Part Status : STOCKED

Element14

Stock : 70

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

4263608RL

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 100
Mult: 1

Specifications

Channel Type

Complementary N and P Channel
Configuration

N and P-Channel
Continuous Drain Current Id N Channel

16.5A
Continuous Drain Current Id P Channel

18A
Current - Continuous Drain (Id) @ 25°C

6A (Ta), 16.5A (Tc), 7A (Ta), 18A (Tc)
Drain Source On State Resistance N Channel

0.046ohm
Drain Source On State Resistance P Channel

0.044ohm
Drain Source Voltage Vds N Channel

40V
Drain Source Voltage Vds P Channel

40V
Drain to Source Voltage (Vdss)

40V
euEccn

NLR
FET Feature

-
Gate Charge (Qg) (Max) @ Vgs

3.5nC @ 10V, 17.2nC @ 10V
hazardous

false
Input Capacitance (Ciss) (Max) @ Vds

150pF @ 20V, 920pF @ 20V
Mounting Type

Surface Mount
No. of Pins

8Pins
Operating Temperature

150°C (TJ)
Operating Temperature Max

150°C
Package / Case

8-PowerTDFN
Power - Max

3W (Ta), 20W (Tc)
Power Dissipation N Channel

20W
Power Dissipation P Channel

20W
Product Range

TUK SGACK902S Keystone Coupler
productTraceability

No
Qualification

-
Rds On (Max) @ Id, Vgs

46mOhm @ 6A, 10V, 44mOhm @ 7A, 10V
rohsCompliant

Yes
rohsPhthalatesCompliant

Yes
Supplier Device Package

8-HSOP
SVHC

No SVHC (14-Jun-2023)
tariffCode

85411000
Technology

MOSFET (Metal Oxide)
Transistor Case Style

HSOP
usEccn

EAR99
Vgs(th) (Max) @ Id

2.5V @ 1mA