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BSM600D12P4G103

BSM600D12P4G103

MOSFET Modules BSM600D12P4G103 is a half bridge module consisting of SiC-UMOSFET

Mouser Electronics

Part Status : New Product

Mouser Electronics

Stock : 4

Packaging Type

VendorPart#

755-BSM600D12P4G103

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 3

Packaging Type

Box

VendorPart#

846-BSM600D12P4G103-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Element14

Part Status : STOCKED

Element14

Stock : 4

Packaging Type

EACH

VendorPart#

4168760

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Channel Type	Dual N Channel
Configuration	2 N-Channel
Current - Continuous Drain (Id) @ 25°C	567A (Tc)
Drain Source On State Resistance	-
Drain to Source Voltage (Vdss)	1200V (1.2kV)
euEccn	NLR
FET Feature	-
Gate Charge (Qg) (Max) @ Vgs	-
hazardous	false
Input Capacitance (Ciss) (Max) @ Vds	59000pF @ 10V
MOSFET Module Configuration	Half Bridge
Mounting Type	Chassis Mount
Operating Temperature	175°C (TJ)
Package / Case	Module
Power - Max	1.78kW (Tc)
Product Range	-
productTraceability	No
Rds On (Max) @ Id, Vgs	-
Rds(on) Test Voltage	-
rohsCompliant	Y-EX
rohsPhthalatesCompliant	Yes
Supplier Device Package	Module
tariffCode	85411000
Technology	Silicon Carbide (SiC)
usEccn	EAR99
Vgs(th) (Max) @ Id	4.8V @ 291.2mA