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BSM600D12P3G001

BSM600D12P3G001

MOSFET Modules 576A 1200V HALF BRIDGE SIC

DigiKey Electronics

Part Status :

DigiKey Electronics

Stock : 4

Packaging Type

Bulk

VendorPart#

846-BSM600D12P3G001-ND

Ware House

US Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

Element14

Part Status : STOCKED

Element14

Stock : 0

Packaging Type

EACH

VendorPart#

3573233

Factory Lead Time

358 Days

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Mouser Electronics

Part Status :

Mouser Electronics

Stock : 4

Packaging Type

VendorPart#

755-BSM600D12P3G001

Ware House

US Warehouse

HTS Code

8541590080

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Continuous Drain Current Id	600A
Current - Continuous Drain (Id) @ 25°C	600A (Tc)
Drain Source Voltage Vds	1.2kV
Drain to Source Voltage (Vdss)	1200V (1.2kV)
FET Feature	Silicon Carbide (SiC)
FET Type	2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	31000pF @ 10V
MOSFET Configuration	Half Bridge
Mounting Type	Chassis Mount
No. of Pins	-
On Resistance Rds(on)	-
Operating Temperature	-40°C ~ 150°C (TJ)
Operating Temperature Max	150°C
Package / Case	Module
Packaging	Bulk
Part Status	Active
Power - Max	2450W (Tc)
Power Dissipation Pd	2.45kW
Product Range	-
Rds On (Max) @ Id, Vgs	-
Rds(on) Test Voltage Vgs	-
Supplier Device Package	Module
SVHC	Lead (08-Jul-2021)
Threshold Voltage Vgs	5.6V
Transistor Case Style	Module
Transistor Polarity	Dual N Channel
Vgs(th) (Max) @ Id	5.6V @ 182mA