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BSM450D12P4G102

BSM450D12P4G102

MOSFET Modules BSM450D12P4G102 is a half bridge module consisting of SiC-UMOSFET

Mouser Electronics

Part Status : New Product

Mouser Electronics

Stock : 4

Packaging Type

VendorPart#

755-BSM450D12P4G102

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 4

Packaging Type

Box

VendorPart#

846-BSM450D12P4G102-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Element14

Part Status : STOCKED

Element14

Stock : 4

Packaging Type

EACH

VendorPart#

4168759

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Channel Type	Dual N Channel
Configuration	2 N-Channel
Continuous Drain Current Id	447A
Current - Continuous Drain (Id) @ 25°C	447A (Tc)
Drain Source On State Resistance	-
Drain Source Voltage Vds	1.2kV
Drain to Source Voltage (Vdss)	1200V (1.2kV)
euEccn	NLR
FET Feature	-
Gate Charge (Qg) (Max) @ Vgs	-
Gate Source Threshold Voltage Max	4.8V
hazardous	false
Input Capacitance (Ciss) (Max) @ Vds	44000pF @ 10V
MOSFET Module Configuration	Half Bridge
Mounting Type	Chassis Mount
No. of Pins	11Pins
Operating Temperature	175°C (TJ)
Operating Temperature Max	150°C
Package / Case	Module
Packaging	Box
Power - Max	1.45kW (Tc)
Power dissipation	1.45kW
Product Range	TUK SGACK902S Keystone Coupler
productTraceability	No
Rds On (Max) @ Id, Vgs	-
Rds(on) Test Voltage	-
rohsCompliant	Y-EX
rohsPhthalatesCompliant	Yes
Supplier Device Package	Module
SVHC	Boric acid (14-Jun-2023)
tariffCode	85411000
Technology	Silicon Carbide (SiC)
Transistor Case Style	Module
usEccn	EAR99
Vgs(th) (Max) @ Id	4.8V @ 218.4mA