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BSM300D12P4G101

BSM300D12P4G101

MOSFET Modules BSM300D12P4G101 is a half bridge module consisting of SiC-UMOSFET

Element14

Part Status : STOCKED

Element14

Stock : 6

Packaging Type

EACH

VendorPart#

4168758

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Mouser Electronics

Part Status : New Product

Mouser Electronics

Stock : 3

Packaging Type

VendorPart#

755-BSM300D12P4G101

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 7

Packaging Type

Box

VendorPart#

846-BSM300D12P4G101-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Channel Type	Dual N Channel
Configuration	2 N-Channel
Continuous Drain Current Id	291A
Current - Continuous Drain (Id) @ 25°C	291A (Tc)
Drain Source On State Resistance	-
Drain Source Voltage Vds	1.2kV
Drain to Source Voltage (Vdss)	1200V (1.2kV)
euEccn	NLR
FET Feature	-
Gate Charge (Qg) (Max) @ Vgs	-
Gate Source Threshold Voltage Max	4.8V
hazardous	false
Input Capacitance (Ciss) (Max) @ Vds	30000pF @ 10V
MOSFET Module Configuration	Half Bridge
Mounting Type	Chassis Mount
No. of Pins	11Pins
Operating Temperature	175°C (TJ)
Operating Temperature Max	150°C
Package / Case	Module
Packaging	Box
Power - Max	925W (Tc)
Power dissipation	925W
Product Range	TUK SGACK902S Keystone Coupler
productTraceability	No
Rds On (Max) @ Id, Vgs	-
Rds(on) Test Voltage	-
rohsCompliant	Y-EX
rohsPhthalatesCompliant	Yes
Supplier Device Package	Module
SVHC	Boric acid (14-Jun-2023)
tariffCode	85411000
Technology	Silicon Carbide (SiC)
Transistor Case Style	Module
usEccn	EAR99
Vgs(th) (Max) @ Id	4.8V @ 145.6mA